TIP34, TIP34a, TIP34b, TIP34c p-n-p single-diffused mesa silicon power transistors for power-amplifier and high-speed-switching applications designed for complementary use with tip33, tip33a, tip33b, tip33c ? 80 w at 25"c case temperature ? 10 a rated collector current ? minf-rof smhzat 10v, 500ma mechanical data the collector is in electrical contact with the mounting tab absolute maximum ratings at 25 c case temperature (unless otherwise noted) TIP34 TIP34a TIP34b TIP34c collector-base voltage ..................... -40 v collector-emitter voltage (see note 1) emitter-base voltage continuous collector current peak collector current (see note 2) continuous base current safe operating region at (or below) 25 c case temperature continuous device dissipation at (or below) 25c case temperature (see note 3) continuous device dissipation at (or below) 25c free-air temperature (see note 4) undamped inductive load energy (see note 5) operating collector junction temperature range storage temperature range lead temperature 1/8 inch from case for 10 seconds notes: 1 . this value applies when the base-emitter diode is open-circuited. 2. this value applies f or tw < 0.3 ms, duty cycle < 1 0%. 3. derate linearly to 1 boc case temperature at the rate of 0.64 w/c. 4. derate linearly to 1 50c free-air temperature at the rate of 28 mw/c. 5. thli rating is bated on the capability of the transistor to operate safely in the circuit of figure 2. l - 20 mh. rgb2 = 100 ft, vbb2 = 0 v, rs = 0.1 si, vcc "10v. energy * 1/2 lc2|_/2. __ __ nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. -40v -40v ?^ ?* ?* ^ -60 v -80 v -60 v -80 v 5 v 10 a 15 a 3 a on w - -65cto 150c - -65cto 150c 9boc -100v -100v ^- _^. quality semi-conductors
types TIP34, TIP34a, TIP34b, TIP34c p-n-p single-diffused mesa silicon power transistors electrical characteristics at 25 c case temperature parameter collector-emitter vibriceo breakdovvn voltage collector cutoff 'ceo current collector cutoff 'ces current emitter cutoff 'ebo current static forward hfe current transfer ratio base-emitter vbe voltage collector-emitter ce(sat) saturation voltage small-signal common-e mitter forward current transfer ratio small-signal i 1 common-emitter forward current transfer ratio test conditions lc = -30ma. lb = 0. see note 6 vce = -30v. ib = o vce = -60v, ib = o vce ? -40 v. vbe - o vce ? -eo v, vbe - o vce - -so v, vbe ? o vce = -100 v, vbe - o veb = -5v, ic = 0 vce?-4v, lc = -1a, see notes 6 and 7 vce=-4v, ic = -3a. see notes 6 and 7 vce --4v. lc = -3 a, see notes 6 and 7 vce*-4v> ic-ioa, see notes 6 and 7 ib- -0.3 a, ic = -3a, see notes 6 and 7 ib = -2.5 a, ic?-10a, see notes 6 and 7 vce ? -10v, ic = -0,5a, f = 1 khz vce--10v, ic*-0.5a, f-1 mhz TIP34 min max -40 -0.7 -0.4 -1 40 20 100 -1.6 -3 -1 -4 20 3 TIP34a min max -60 -0.7 -0.4 -1 40 20 100 -1.6 -3 -1 -4 20 3 TIP34b min max -80 -0.7 -0.4 -1 40 20 100 -1.6 -3 ?! -4 20 3 TIP34c min max -100 -0.7 -0.4 -1 40 20 100 -1.6 -3 -1 ~4 20 3 v ma rna v v notes; 6. these parameters must be measured using pulse techniques. tw = 300 jls, duty cycle < 2%. 7. these parameters sre measured with voltage-sensing contacts separate from the current-carrying contacts. thermal characteristics parameter r0jc junction-to-case thermal resistance r9ja junction-to-free-air thermal resistance max 1.56 35.7 unit c/w switching characteristics at 25c case temperature parameter ton turn-on time toff turn-off time test conditions* ic = -6a, led) * -0.6 a, ib(2) = 0.6a, vbe(off)=4v, ri_-sn, see figure 1 typ 0.4 0.7 unit ms t volt age and current value* shown are nominal; exact value* vary slightly with translator parameter*.
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